free carrier

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The term free carrier means that any interactions between the carriers are neglected.

Free carrier model: In simple models, many-particle interactions are often neglected.

This degree of change must have a picture that includes "trapping" of free carriers.

Then, the density of free carriers in the conduction and/or the valence band will increase.

In these cases they refer to the number of dimensions in which a confined particle can act as a free carrier.

This implies the presence of more free carriers in the gate region, which lowers the gate current needed.

When an electron meets with a hole, they recombine and these free carriers effectively vanish.

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Charge trapping centers that scatter free carriers form in many cases due to defects associated with dangling bonds.

Scattering happens because after trapping a charge, the defect becomes charged and therefore starts interacting with free carriers.

However, the waveguide must be designed carefully to avoid excessive free carrier absorption loss in the heavily-doped layers.

Exposing a semiconductor to light can generate electron-hole pairs, which increases the number of free carriers and its conductivity.

Because E is so small, it takes little energy to ionize the dopant atoms and create free carriers in the conduction or valence bands.

Free carrier concentration is the concentration of free carriers in a doped semiconductor.

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On samples with low free carrier density conductance transients have also been used for a DLTS analysis.

Therefore, at the free carrier level a scattering time has to be introduced phenomenologically, usually extracted from experiment, but will change with carrier density and temperature.

Free carrier (FCA)

Free carriers in doped semiconductors or optically excited semiconductors lead to a considerable absorption of THz photons.

Free carrier absorption occurs when a material absorbs a photon and a carrier is excited from a filled state to an unoccupied state (in the same band).

Free carriers are electrons (or holes) which have been introduced directly into the conduction band (or valence band) by doping and are not promoted thermally.

Absorption coefficient can be manipulated by Franz-Keldysh effect, Quantum-Confined Stark Effect, excitonic absorption, or changes of free carrier concentration.

The energy difference in the ionization energy acceptor and the electron affinity of the donor leads to a charge transfer and consequently to free carriers whose number is normally fixed.