transistor
junction transistor
electronic transistor

Morgan Sparks made the bipolar junction transistor into a practical device.

It would evolve into the bipolar junction transistor.

The first paper analyzing the use of bipolar junction transistors in the avalanche region.

Soon afterward, Shockley improved on their idea by developing a junction transistor.

The bipolar junction transistor, unlike other transistors, is usually not a symmetrical device.

These equations are based on the transport model for a bipolar junction transistor.

They changed all the circuits to more reliable types of junction transistors, although it appears they may have built one example with the earlier designs.

There has been considerable debate over the characteristics of tubes versus bipolar junction transistors.

This resulted in the junction transistor, which was announced at a press conference on July 4, 1951.

In bipolar junction transistors, the emitter current is sum of the collector and base currents.